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Simulator for Dynamic Ion Beam Mixing

Published online by Cambridge University Press:  25 February 2011

A. Seidl
Affiliation:
Government Industrial Research Institute Osaka, Midarigaoka 1–8–31, Ikeda, Osaka 563
K. Fujii
Affiliation:
Government Industrial Research Institute Osaka, Midarigaoka 1–8–31, Ikeda, Osaka 563
M. Kiuchi
Affiliation:
Government Industrial Research Institute Osaka, Midarigaoka 1–8–31, Ikeda, Osaka 563
M. Satou
Affiliation:
Government Industrial Research Institute Osaka, Midarigaoka 1–8–31, Ikeda, Osaka 563
M. Takai
Affiliation:
Government Industrial Research Institute Osaka, Midarigaoka 1–8–31, Ikeda, Osaka 563
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Abstract

Dynamic ion beam mixing (simultaneous deposition and ion beam irradiation) was simulated for the first time. Standard Monte Carlo (MC) programs do not account for the steady change of target geometry caused by the layer growth during the process. Therefore a time-step strategy was realized by integrating a MC simulator in a system together with a geometry update module. A comparison between simulation results and XPS and TEM measurements shows reasonable agreement between simulation and measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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