Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:30:42.151Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulations of Buffer Layers in a-Si:H Thin Film Solar Cells Deposited with an Expanding Thermal Plasma

Published online by Cambridge University Press:  01 February 2011

A.M.H.N. Petit ,
M. Zeman ,
R.A.C.M.M. van Swaaij  and
M.C.M. van de Sanden
A.M.H.N. Petit
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands. Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
M. Zeman
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands.
R.A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands.
M.C.M. van de Sanden
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Get access

Abstract

With an Expanding Thermal Plasma Chemical Vapor Deposition system (ETP-CVD), solar grade amorphous silicon (a-Si:H) can be deposited at high deposition rate (> 2 nm/s). We think that during the first stage of deposition, a material is grown with a higher defect density than the rest of the bulk creating a defect-rich layer (DRL). Therefore we analyzed, by the means of simulations, the influence of the position of the DRL on the performance of a p-i-n a-Si:H solar cell when moved from the p-i towards the i-n interface and as a function of its thickness. We investigate the effect of a buffer layer in between the p- and the i-layer on the external parameters of the solar cell. The presence of a buffer layer increases the electric field near the p-i interface, which leads to a higher collection of free charge carriers at the interface, although the electric field is then diminished deeper in the bulk. It appears that 10 nm thick buffer layer is sufficient to improve the performance. In case no buffer layer is applied, recombination losses at the p-i interface diminish the performance of the solar cell. We also observe that an increase of the DRL thickness results in a reduction of the solar-cell performance, which is more pronounced when the DRL is located in the region close to the p-i interface rather than close to the i-n interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A7.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kessels, W.M.M., Severens, R.J., Smets, A.H.M., Korevaar, B.A., Adriaenssens, G.J., Schram, D.C. and Sanden, M.C.M. van de, J. Appl. Phys. 89, 2404 (2001).Google Scholar
2. Korevaar, B.A., Smit, C., Smets, A.H.M., Swaaij, R.A.C.M.M. van, Schram, D.C. and Sanden, M.C.M. van de, Proc. of 28th IEEE-PVSC (2000), 916.Google Scholar
3. Korevaar, B.A., Petit, A.M.H.N., Smit, C., Swaaij, R.A.C.M.M. van, and Sanden, M.C.M. van de, Proc. of 29th IEEE-PVSC (2002), 1230.Google Scholar
4. Zeman, M., Willemen, J.A., Vosteen, L.L.A., Tao, G., and Metselaar, J.W., Solar Energy Materials and Solar Cells 46, 81 (1997).Google Scholar
5. Zimmer, J., Stiebig, H. and Wagner, H., J. Appl. Phys. 84, 15 (1998).Google Scholar
6. Powell, M.J. and Deane, S.C., Phys. Rev. B 48, 10 815 (1993).Google Scholar