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Simulation Studies of TiN PVD and CVD Thin Films for Contact/Via Liners

Published online by Cambridge University Press:  15 February 2011

D.S. Bang ,
J.P. McVittie ,
K.C. Saraswat ,
J.A. Iacoponi ,
J Gray ,
Z. Krivokapic  and
K. A. Littau
D.S. Bang
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305.
J.P. McVittie
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305.
K.C. Saraswat
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305.
J.A. Iacoponi
Affiliation:
Advanced Micro Devices, One AMD PI, Sunnyvale, CA 94088.
J Gray
Affiliation:
Advanced Micro Devices, One AMD PI, Sunnyvale, CA 94088.
Z. Krivokapic
Affiliation:
Advanced Micro Devices, One AMD PI, Sunnyvale, CA 94088.
K. A. Littau
Affiliation:
Applied Materials, 3050 Bowers Ave, Santa Clara, CA, 95054.
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Abstract

TiN PVD and CVD models have been incorporated in the SPEEDIE topography simulator. A parameter extraction methodology is presented which allows engineers to locally calibrate their process to the SPEEDIE simulator. The calibration requires no special equipment or modifications to the PVD or CVD equipment. Parameter extraction is demonstrated with Applied Materials deposition equipment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 173
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 SPEEDIE is a VLSI etching and deposition simulator developed at Stanford University.Google Scholar
2 Littau, K.A., et. al., 1994 Proc. 11th Inter. VLSI Multilevel Interconnection Conf. (VMIC), (Santa Clara, 1994), pp. 440–442.Google Scholar
3 Toprac, A.J., et. al., Proc. Evolution of Thin Films, Surface Structure, and Morphology, (Materials Research Society, Pittsburgh, 1994), to be published.Google Scholar
4 Bariya, A.J., Deposition Kinetics and Characteristics of Fluorocarbon Plasma Polymer Films and Their Role in Dry Etching, (Stanford University, Stanford, 1990), p. 158.Google Scholar
5 Paranjpe, A.P. and M., IslamRaja, submitted J. Vac. Sci. Technol. A.Google Scholar
6 Cale, T.S., J. Vac. Sci. Technol. B 9, 2551, (1991).Google Scholar
7 IslamRaja, M.M., et. al., Proc. 7th Inter. Conf. on Numerical Analysis of Semi. Dev., (Copper Mt., 1991).Google Scholar