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Simulation of the Variability in Next-Generation Microelectronic Capacitors with Polycrystalline Dielectrics

Published online by Cambridge University Press:  17 March 2011

Jesse L. Cousins  and
David E. Kotecki
Jesse L. Cousins
Affiliation:
Department of Electrical and Computer Engineering, University of Maine 5708 Barrows Hall Orono, ME 04469-5708
David E. Kotecki
Affiliation:
Department of Electrical and Computer Engineering, University of Maine 5708 Barrows Hall Orono, ME 04469-5708
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Abstract

Monte Carlo simulations of capacitors with polycrystalline (Bax, Sr1−x)TiO3 (BST) dielectrics were performed. The variation in capacitors due to the polycrystalline microstructure of the dielectric was investigated, as well as the effects of varying the distribution of crystal sizes. When a lognormal probability density function (pdf) was used to approximate the crystal area pdf and the average number of crystals per capacitor was near 100, it was found that the minimum capacitance value was nearly independent of the standard deviation of crystal area distribution. Both the mean and maximum capacitance values were found to increase as the width of the standard deviation increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.24.1
Copyright
Copyright © Materials Research Society 2002

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References

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