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Simulation of the Growth of Heterostructures

Published online by Cambridge University Press:  10 February 2011

J.H. Harding  and
A.H. Harker
J.H. Harding
Affiliation:
Dept. Physics & Astronomy, University College, London, United Kingdom
A.H. Harker
Affiliation:
Dept. Physics & Astronomy, University College, London, United Kingdom
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Abstract

The production and morphology of hetero-structures presents problems at a variety of length-scales. A common problem is the production and accommodation of stresses in the film due to mis-match. We shall first discuss examples of atomistic nucleation and growth at interfaces and the use of atomistic simulations to obtain parameters for rate-theory models of cluster and film growth. We shall then consider the effect of stress on growing films. In strained-layer semi-conductor systems, for example, the growth of small islands gives rise to stress distributions which differ strongly from those in continuous layers. Interesting strain effects are also observed in ceramics. We will discuss the relationship between stress and the growth and morphology of films, where effective medium models may be used to derive effective bulk properties for films with imperfections such as porosity and cracks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 529: Symposia BB – Computational & Mathematical Models of Microstructural Evolution , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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