Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-23T06:05:05.861Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm

Published online by Cambridge University Press:  31 January 2011

Christoph Ebm  and
Gerhard Hobler
Christoph Ebm
Affiliation:
[email protected], IMS Nanofabrication AG, Vienna, Austria
Gerhard Hobler
Affiliation:
[email protected], Vienna University of Technology, Institute of Solid State Electronics, Vienna, Austria
Get access

Abstract

Ion-beam induced etching and deposition rates are proportional to the flux of recoils reaching the surface. Based on this finding we propose an improved algorithm for etching and deposition simulations. In this algorithm the recoil flux at each point on the surface is calculated by summing up the recoil fluxes originating from ions impinging on any other surface point. The latter are determined by interpolation in tables calculated by binary collision simulations. For concave surfaces a correction to this algorithm is proposed. Fluxes calculated by this model are in good agreement with binary collision simulations of collision cascades in the same 2-d structure. Consistent with experimental findings, the model predicts that deposited pillars are broader than the ion beam, while etched trenches do not show such broadening. The pillar broadening is related to the lateral straggling of the recoils.

Keywords

ion-beam assisted depositionion-beam processingsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD03-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Utke, I. Hoffmann, P. and Melngailis, J. J. Vac. Sci. Technol. B26, 1197 (2008).Google Scholar
2 Kometani, R. Ishihara, S. Kaito, T. and Matsui, S. Appl. Phys. Express 1, 055001 (2008).Google Scholar
3 Platzgummer, E. et al. , Proc. SPIE Vol. 7122 (2008) and BACUS Newsletter 25, 2 (Feb 2009).Google Scholar
4CHARPAN, http://www.charpan.com/.Google Scholar
5 Platzgummer, E. et al. J. Vac. Sci. Technol. B26, 2059 (2008).Google Scholar
6NILaustria, http://www.nilaustria.at/.Google Scholar
7 Fujita, J. Ishida, M. Sakamoto, T. Ochiai, Y. Kaito, T. and Matsui, S. J. Vac. Sci. Technol. B19, 2834 (2001).Google Scholar
8 Ro, J.S. Thompson, C.V. and Melngailis, J. J. Vac. Sci. Technol. B12, 73 (1994).Google Scholar
9 Kim, H.-B. Hobler, G. Lugstein, A. and Bertagnolli, E. J. Micromech. Microeng. 17, 1178 (2007).Google Scholar
10 Ebm, C. and Hobler, G. Nucl. Instr. Meth. B(2009) accepted for publicationGoogle Scholar
11SRIM, http://www.srim.orgGoogle Scholar
12 Platzgummer, E. et al. , Microelectr. Eng. 83, 936 (2006).Google Scholar
13 Hobler, G. Nucl. Instr. Meth. B96, 155 (1995).Google Scholar