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Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading

Published online by Cambridge University Press:  15 February 2011

E. Schroten ,
M. Zeman ,
R. A. C. M. M. van Swaaij ,
L. L. A. Vosteen  and
J. W. Metselaar
E. Schroten
Affiliation:
Delft University of Technology, Laboratory of Electronic Components, Technology and Materials – DIMES, P. O. Box 5053, NL-2600 GB Delft, the Netherlands
M. Zeman
Affiliation:
Delft University of Technology, Laboratory of Electronic Components, Technology and Materials – DIMES, P. O. Box 5053, NL-2600 GB Delft, the Netherlands
R. A. C. M. M. van Swaaij
Affiliation:
Delft University of Technology, Laboratory of Electronic Components, Technology and Materials – DIMES, P. O. Box 5053, NL-2600 GB Delft, the Netherlands
L. L. A. Vosteen
Affiliation:
Delft University of Technology, Laboratory of Electronic Components, Technology and Materials – DIMES, P. O. Box 5053, NL-2600 GB Delft, the Netherlands
J. W. Metselaar
Affiliation:
Delft University of Technology, Laboratory of Electronic Components, Technology and Materials – DIMES, P. O. Box 5053, NL-2600 GB Delft, the Netherlands
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Abstract

Computer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 773
Copyright
Copyright © Materials Research Society 1999

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