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Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures

Published online by Cambridge University Press:  03 September 2012

S. M. Myers ,
A. F. Wright ,
G. A. Petersen ,
C. H. Seager ,
M. H. Crawford ,
W. R. Wampler  and
J. Han
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
A. F. Wright
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
G. A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
M. H. Crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

The behavior of H in p-GaN(Mg) at temperatures >400°C is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W9.4
Copyright
Copyright © Materials Research Society 1999

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References

1. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys., 86, 1 (1999).Google Scholar
2. Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys., 31, 1258 (1992).Google Scholar
3. Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. Lett., 75, 4452 (1995).Google Scholar
4. Wright, A. F., Phys. Rev. B, 60, R5101 (1999).Google Scholar
5. Götz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., and Haller, E. E., Appl. Phys. Lett., 69, 3725 (1996).Google Scholar
6. Herring, C. and Johnson, N. M., in Hydrogen in Semiconductors, edited by Pankove, J. I. and Johnson, N. M. (Academic, New York, 1991) pp. 234–235.Google Scholar
7. Götz, W., Johnson, N. M., Walker, J., Bour, D. P., and Street, R. A., Appl. Phys. Lett., 68, 667 (1996), and citations therein.Google Scholar
8. J. Phys. Chem. Ref. Data, Vol. 14, Suppl. 1, p. 1002 (1985).Google Scholar
9. Hill, T. L., An Introduction to Statistical Thermodynamics (Dover, New York, 1986) pp. 86–93.Google Scholar
10. Myers, S. M., Caskey, G. R. Jr., Rawl, D. E. Jr., and Sisson, R. D. Jr., Metall. Trans. A, 14, 2261 (1983).Google Scholar
11. Tompkins, F. C., Chemisorption of Gases on Metals (Academic, New York, 1978).Google Scholar
12. Shekhar, R. and Jensen, K. F., Surf. Sci., 381, L581 (1997).Google Scholar
13. Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys., 31, L139 (1992).Google Scholar