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Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process

Published online by Cambridge University Press:  15 February 2011

Gyeong Soon Hwang ,
Chee Burm Shin  and
Sang Heup Moon
Gyeong Soon Hwang
Affiliation:
Dept. of Chemical Engineering, Seoul National University, Seoul 151-742, Korea.
Chee Burm Shin
Affiliation:
Dept. of Chemical Engineering, Ajou University, Suwon 441-749, Korea.
Sang Heup Moon
Affiliation:
Dept. of Chemical Engineering, Seoul National University, Seoul 151-742, Korea.
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Abstract

Deposition of a thin film in the LPCVD process has been simulated by a Monte–Carlo method based on a simple model taking into account the desorption, the surface reaction, and the surface migration of the film precursor. The model has been used for the simulation of the film profile obtained in a narrow and deep trench and of the film crystallinity on a flat surface. The simulation results describe successfully those obtained by experiments under various process conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 125
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 McConica, C. M. and Krishnamani, K., J. Electrochem. Soc. 133, 542 (1986).Google Scholar
2 Levin, R. M. and Evans, K. L., J. Vac. Sci. Technol. B 1, 54 (1983).Google Scholar
3 Wulu, H. C., Saraswat, K. C. and McVittie, J. P., J. Electrochem. Soc. 138, 831 (1991).Google Scholar
4 Naumovets, A. G. and Vedula, Y. S., Surface Science Reports 4, 425 (1985).Google Scholar
5 Bonfield, T. and Blumenthal, R., in Tungsten and Other Advanced Metals for VLSI/ULSI Applications V, edited by Wong, S. S. and Furukawa, S. (MRS, Pitts., 1990), pp. 145–156.Google Scholar
6 Sze, S. M., VLSI Technology. 2nd ed. (McGraw-Hill, New York, 1988), p. 255. Google Scholar
7 King, D. A., CRC Critical Rev. of Solid State and Materials Sciences 7, 167 (1977).Google Scholar
8 Zangwill, A., Physics at Surfaces (Cambridge Univ. Press, 1989), pp. 363–375.Google Scholar
9 Dacey, J. R., Industrial and Engineering Chemistry 57, 27 (1965).Google Scholar
10 Chuang, T. J., Surface Science Reports 3, 1 (1983).Google Scholar