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Simulating Vacancy, Impurity And Electronic Defect States In Mgo,Lici And La2Cuo4 Using Quantum Cluster And Classical Lattice Simulation Techniques In A Consistent Manner.

Published online by Cambridge University Press:  26 February 2011

Robin W. Grimes
Affiliation:
The Royal Institution of Great Britain, 21 Albemarle Street, London, W IX 4BS, U.K.,
C. R. A. Catlow
Affiliation:
The Royal Institution of Great Britain, 21 Albemarle Street, London, W IX 4BS, U.K.,
A. L. Shluger
Affiliation:
Department of Solid State Physics, Latvia University, Riga, U.S.S.R.
R. Pandey
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI.49931, U.S.A.
R. Baetzold
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, NY 14650–2001, U.S.A.
A. H. Harker
Affiliation:
Theoretical Studies Department, AEA Industrial Technology, Harwell, Oxon, OX11 ORA, U.K.
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Abstract

We calculated defect energies by using a Hartree-Fock method to model an inner region that includes the defect site and oneor two shells of lattice ions. This is surrounded by an embedding region that is described by a classical Mott-Littleton calculation. Electrostatic multipole consistency between the two jegions is maintained throughout.

The results of defect calculations on MgO are examined as a function of basis set. We find that a sophisticated basis set is required before a reliable defect formation energy can be guaranteed. This experience has allowed us to develop a new model for the off-center relaxation of the exciton in LiC1. These calculations have required the use of pseudo potential cores for anions and floating functions to model the diffuse electron. Lastly, we report on recent calculations concerning the stability of hole states in La2CuO4. We find considerable delocalization of the hole over both the Cu2+ ions and the 02− ions that form the Cu-O planes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Harding, J. H., Harker, A. H., Keegstra, P. B., Pandey, R., Vail, J. M. and Woodward, C., Physica B 131, 151 (1985).Google Scholar
2. Pandey, R. and Vail, J. M., J. Phys.: Condensed Matter 1, 2801 (1989).Google Scholar
3. Meng, J., Kunz, A. B. and Woodward, C., Phys. Rev. B, 38, 10870 (1988).CrossRefGoogle Scholar
4. Shluger, A. L., Grimes, R. W. and Catlow, C. R. A., J. Phys.: Condensed Matter in press.Google Scholar
5. Grimes, R. W., Catlow, C. R. A. and Stoneham, A. M., J. Phys.: Condensed Matter 1, 7367 (1989).Google Scholar
6. Press, M. R. and Ellis, D. E., Phys. Rev. B. 35, 4438 (1987).Google Scholar
7. Pisani, C., Dovesi, R. and Roetti, C., Hartree-Fock Ab initioTreatment of Crystalline Systems Lecture Notes in Chemistry 48, (Springer-Verlag, 1988).CrossRefGoogle Scholar
8. Bachelet, G. R., Hamann, D. R. and Schlüter, M., Phys. Rev. B 26, 4199 (1982).Google Scholar
9. Mott, N. F. and Littleton, M. J., Trans. Faraday Soc. 34, 485 (1938).Google Scholar
10. Computer Simulation of Defects in Polar Solids; Special issue of J.Chem.Soc. Faraday Trans. 85 [5] (1989).Google Scholar
11. The practical calculation of Interionic Potentials in Solids; Special issues of Molecular Simulation 4[5] and 5[2] (1990).Google Scholar
12. Dick, B. G. and Overhauser, A. W., Phys. Rev. 112, 90 (1958).Google Scholar
13. Wuensch, B. J., in Mass Transport in Solids, edited by Beniere, F. and Catlow, C. R. A. (Plenum Press, New York, 1983).Google Scholar
14. Boys, S. F. and Bernardi, F., Mol. Phys. 19, 553 (1970).Google Scholar
15. van Lenthe, J. H., van Duijneveldt-van de Rijdt, J. G. C. M. and van Duijneveldt, F. B., in Ab initio Methods in Ouantum Chemistry II. edited by Lawley, K. P. (Wiley, New York, 1987) p 520.Google Scholar