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Simulating Stm Images for the Gaas (110) Surface

Published online by Cambridge University Press:  10 February 2011

James R. Chelikowsky  and
Hanchul Kim
James R. Chelikowsky
Affiliation:
Department of Chemical Engineering and Materials Science, Minnesota Supercomputer Institute, University of Minnesota, Minneapolis, MN 55455, USA
Hanchul Kim
Affiliation:
Gordon-McKay Laboratory, Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, MA 02138, USA
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Abstract

Scanning tunneling microscopy (STM) is one of the most successful experimental tools for probing the structure of semiconductor surfaces. However, care must be taken in interpreting the images at the atomistic limit. Often a “naive” interpretation of the STM image can yield an incorrect surface structure. We illustrate this situation via ab initio pseudopotential calculations for the STM image of the (110) GaAs surface. We will compare theoretical STM images to experimental images for the relaxed surface and for a surface with an As vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 49
Copyright
Copyright © Materials Research Society 1998

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