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SIMS Study of C, O and N Impurity Contamination for Multi-Crystalline Si Solar Cells

Published online by Cambridge University Press:  21 March 2011

Larry Wang  and
R. S. Hockett
Larry Wang
Affiliation:
Evans Analytical Group, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.
R. S. Hockett
Affiliation:
Evans Analytical Group, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.
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Abstract

This paper is a case study of using SIMS to quantitatively measure C, O and N impurity contamination at two sequential commercial process steps: (1) Si feedstock: 7N (modified Siemens) and 5N feedstock (UMG-Si); and (2) multi-crystalline (mc-Si) solar wafers: cut and etched, from directional solidification bricks grown from 7N and 7N/5N (80:20) feedstock. The conclusion of this study is twofold: (a) the primary opportunity to reduce C, O and N contamination in mc-Si solar cells is at the directional solidification process, and (b) the costly specification of highly pure Si feedstock is unnecessary from a C, O and N perspective if a directional solidification process is used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1123: Symposium P – Photovoltaic Materials and Manufacturing Issues , 2008 , 1123-P01-06
Copyright
Copyright © Materials Research Society 2009

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