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SIMS, SAM and RBS Study of High Dose Oxygen Implantation into Silicon

Published online by Cambridge University Press:  22 February 2011

W. M. Lau ,
P. Ratnam  and
C. A. T. Salama
W. M. Lau
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
P. Ratnam
Affiliation:
Dept. of Electrical Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4
C. A. T. Salama
Affiliation:
Dept. of Electrical Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4
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Abstract

Secondary Ion Mass Spectrometry, Scanning Auger Microscopy, and Rutherford Backscattering Spectroscopy have been used to study a buried oxide structure on silicon formed by high dose implantation. All these surface analytical techniques give useful information about the oxygen distribution in the buried oxide structure. The difficulties in these techniques have also been assessed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 263
Copyright
Copyright © Materials Research Society 1985

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References

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