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Simple Model for Rare-Earth Impurities in the Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

Nicolas P. Ilyin  and
Vadim F. Masterov
Nicolas P. Ilyin
Affiliation:
State Technical University, Experimental Physics Department, 195251St.Petersburg, Russia
Vadim F. Masterov
Affiliation:
State Technical University, Experimental Physics Department, 195251St.Petersburg, Russia
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Abstract

A model of the ground state for a rare-earth element in a binary semiconductor is suggested and illustrated for ytterbium in InP. It is shown that the charge state of Yb3+ with 4f13 shell is more stable than the state of Yb2+ with f 14 shell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 409
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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[2] Ilyin, N.P., Hasterov, V.F. and Vasilyev, A.L., Sov.Phys.Semicond. 25 1886, (1991)Google Scholar
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[6] Vasilyev, A.E., Ilyin, N.P. and Masterov, V.F., Sov.Phys.Semicond. 22, 1253 (1988)Google Scholar