Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-20T00:42:27.091Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon-Nickel Compounds by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

S. G. B. Mayer ,
F. F. Milillo  and
D. I. Potter
S. G. B. Mayer
Affiliation:
Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
F. F. Milillo
Affiliation:
Department of Mechanical Engineering, Union College, Schenectady, New York 12308
D. I. Potter
Affiliation:
Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
Get access

Abstract

Compounds of silicon and nickel have been formed by implanting silicon ions into nickel at various fluences and temperatures. Temperature during implantation is a major factor controlling implanted ion concentrations and phase developments. The ordered phase Ni3Si, which forms during implantation at 600°C, is replaced by Ni5Si2 during implantation at 400°C or below. In contrast to aluminum implantation of nickel, crystalline phases form even at high fluences (>1 × 1018 ions/cm2) and at low temperatures (<200°C) in silicon implanted nickel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 39: Symposium G – High-Temperature Ordered Intermetallic Alloys I , 1984 , 521
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] American Society for Metals, Metals Handbook, 8th ed, Vol.8, “Metallography, Structure and Phase Diagrams” (ASS, Metals Park, Ohio, 1973) 325.Google Scholar
[2] Potter, D. I., Ahmed, M. and Lamond, S., in “Ion Implantation and Ion Beam Processing of Materials (edited by Hubler, G. K., Holland, O. K. and Clayton, C. R.), p. 117. North Holland Publishing Co. Inc., New York (1984).Google Scholar
[3] Potter, D. I., in: Phase Stability During Irradiation, eds. Holland, R., Mansur, L. and Potter, D., AIME Conference, Pittsburgh, PA (October 5–9, 1980) 521–546.Google Scholar
[4] Potter, D. I. and Hernandez, O. G., Acta Metallurgica, 29 (1981) 187.Google Scholar
[5] Okamoto, P. R. and Rehn, L. E., J. Nucd. Mater., 83 (1979) 2.Google Scholar