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Silicon Surface Micromachined Structures for the Stress Measurement of Thin Films

Published online by Cambridge University Press:  15 February 2011

Risto Mutikainen
Affiliation:
Technical Research Centre of Finland, Semiconductor Laboratory, Otakaari 7 B, FIN-02150 Espoo
Markku Orpana
Affiliation:
Technical Research Centre of Finland, Semiconductor Laboratory, Olarinluoma 9, FIN-02200 Espoo, Finland
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Abstract

The realization of structures with silicon surface micromachining requires very low stresses of the structural elements. When low tensile film strains have been difficult to measure as no double-beam type structures susceptible for buckling at low tensile strains have been in use, a new “diamond beam” structure is proposed for the tensile-to-compressive strain conversion. The device performance is analysed as a strain gauge.

The micromachined structures can also be used as substrates for deposited films. The formulation is presented for double beam as substrate for deposited film compressive strain gauging. The structures were applied for strained sputter-deposited Molybdenum, and it was found that large undercut of the double beam edge must be avoided as well as the spacer film thickness must be large enough for beam buckling to be noticeable.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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