Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:37:33.930Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry

Published online by Cambridge University Press:  10 February 2011

S. De Gendt ,
K. Kenis ,
M. Baeyens ,
P. W. Mertens ,
M. M. Heyns ,
G. Wiener ,
S. J. Kidd ,
D. M. Knotter  and
P. K. De Bokx
S. De Gendt
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
K. Kenis
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. Baeyens
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
P. W. Mertens
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. M. Heyns
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
G. Wiener
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
S. J. Kidd
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
D. M. Knotter
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. K. De Bokx
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Get access

Abstract

Grazing-Emission X-Ray Fluorescence Spectrometry (GEXRF) is a new analytical X-ray fluorescence technique, which like TXRF takes advantage of the total-reflection phenomenon. The main advantage of GEXRF over TXRF is its sensitivity towards light elements. This paper presents straight GEXRF and VPD-DC-GEXRF analysis results for Na, Mg, Al, K and Ca surface contamination on silicon wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 397
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Vermeire, B., Rotondaro, A.L.P., Mertens, P.W., Verhaverbeke, S., Heyns, M.M. in Proc. of 3rd Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, (184th ECS Meeting, New Orleans, LA, 1993).Google Scholar
2. Mertens, P.W., De Gendt, S., Depas, M., Kenis, K., Opdebeeck, A., Snee, P., Graf, D., Brown, G., Heyns, M. M., in Proc. of 3rd Int. Symp. on Ultra Clean Processing of Silicon Surfaces, edited by Heyns, M. (Acco, Leuven, Belgium, 1996), p. 33–36.Google Scholar
3. Ohmori, T., Yokoi, N., Sato, K., in Proc. of 3rd Int. Symp. on Ultra Clean Processing of Silicon Surfaces, edited by Heyns, M. (Acco, Leuven, Belgium, 1996), p.25–28. Google Scholar
4. Becker, R.S., Golovchenko, J.A., Patel, J.R., Phys. Rev. Lett., 50, p.153 (1993).CrossRefGoogle Scholar
5. de Bokx, P.K., Urbach, H.P., Rev. Sci. Instrum., 66, p.1 (1995).CrossRefGoogle Scholar
6. de Bokx, P.K., Urbach, H.P., Anal. Sci., 11(3), p.549 (1995).Google Scholar
7. De Gendt, S., Kenis, K., Mertens, P.W., Heyns, M.M., Claes, M., Van Grieken, R.E., Bailleul, A., Knotter, M., de Bokx, P.K., in Proc. of 3rd Int. Symp. on Ultra Clean Processing of Silicon Surfaces, edited by Heyns, M. (Acco, Leuven, Belgium, 1996), p.57–60.Google Scholar
8. Ida, A., Sakurai, K., Gohshi, Y., X-ray Anal., 31, p. 4 87 (1988).Google Scholar
9. PAD-SCAN: produced by GeMeTec, Geretsriederstr. 10A, D-81379 Munchen, GermanyGoogle Scholar
10. Neumann, C., Eichinger, P., Spectrochim. Acta B, 46, p. 1369 (1991).CrossRefGoogle Scholar
11. IMEC, Internal report 1995.Google Scholar