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Silicon Surface Cleaning for Low Temperature Epitaxial Growth

Published online by Cambridge University Press:  21 February 2011

John O. Borland ,
Carol Riggi  and
Faye Brocious
John O. Borland
Affiliation:
Genus, Inc., 1139 Karlstad Dr., Sunnyvale, CA., 94089
Carol Riggi
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave., Santa Clara, CA., 95054
Faye Brocious
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave., Santa Clara, CA., 95054
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Abstract

The effects of various ex-situ and in-situ silicon surface cleaning techniques on low temperature epitaxial growth down to 650°C have been characterized. For ex-situ cleaning, wet HF cleans with and without a chemically grown oxide were compared along with vapor HF cleaning. In-situ cleaning was achieved by rapid thermal cleaning (RTC), a 1min. hydrogen bake at various temperatures. When the residual surface oxide was >2e15/cm2 or fluorine >4e13/cm2, a continuous interface was observed and epitaxial growth could not be achieved (conical/columnar poly deposition). By optimizing the in-situ RTC process for either wet or vapor HF ex-situ clean, high quality low temperature epitaxial growth was realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 71
Copyright
Copyright © Materials Research Society 1993

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References

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