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Silicon Self-Interstitial Clusters

Published online by Cambridge University Press:  10 February 2011

L. Colombo ,
A. Bongiorno  and
M. ROSATI
L. Colombo
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1-20126 Milano, Italy
A. Bongiorno
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1-20126 Milano, Italy
M. ROSATI
Affiliation:
CASPUR, Univ. Roma “La Sapienza”, Ple Moro 5, 00185 Roma, Italy
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Abstract

A tight-binding molecular dynamics investigation on the structure and energetics of self-interstitial clusters in silicon is presented. We discuss how a small number of self-interstitial atoms give rise to the formation of tedrahedally-shaped clusters, while a larger number of defects exhibit a self-organization mechanism driving the system to form rod-like defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 413
Copyright
Copyright © Materials Research Society 1999

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