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Silicon Nitride Deposited at Very Low Silane Pressures Using Electron Cyclotron Resonance Plasmas

Published online by Cambridge University Press:  22 February 2011

J. R. Flemish ,
R. Pfeffer ,
W. Buchwald  and
K. A. Jones
J. R. Flemish
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate Ft. Monmouth, NJ 07703.
R. Pfeffer
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate Ft. Monmouth, NJ 07703.
W. Buchwald
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate Ft. Monmouth, NJ 07703.
K. A. Jones
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate Ft. Monmouth, NJ 07703.
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Abstract

We report on the material properties of SiNx:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an ECR reactor. Deposition rates, refractive index, and stoichiometry have been characterized using ellipsometry, Rutherford backscattering spectroscopy, and infrared spectroscopy. Reactor conditions of 2m Torr total pressure, 650W microwave power, and substrate temperature of 250°C result in high quality, stoichiometric silicon nitride. With a SiH4/N2 ratio = 0.003, hydrogen incorporation is approximately 1.5% and the refractive index is nr =2.0. Lower microwave power and a higher SiH4/N2 ratio result in slightly N-rich films which is attributable to increased H-incorporation. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 15
Copyright
Copyright © Materials Research Society 1993

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References

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