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Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

Published online by Cambridge University Press:  10 February 2011

N. Daldosso ,
G. Das ,
G. Dalba ,
S. Larcheri ,
R. Grisenti ,
G. Mariotto ,
L. Pavesi ,
F. Rocca ,
F. Priolo  and
G. Franzò
...Show all authors
N. Daldosso
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Das
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Dalba
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
S. Larcheri
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
R. Grisenti
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Mariotto
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
L. Pavesi
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
F. Rocca
Affiliation:
CNR-IFN, Sezione “CeFSA” di Trento, I-38050 Povo (Trento), Italy
F. Priolo
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
G. Franzò
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
A. Irrera
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
M. Miritello
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
D. Pacifici
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
F. Iacona
Affiliation:
CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy
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Abstract

Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I1.3
Copyright
Copyright © Materials Research Society 2003

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