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Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation

Published online by Cambridge University Press:  26 February 2011

S. T. Ahn ,
J. D. Shott  and
W. A. Tiller
S. T. Ahn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
J. D. Shott
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
W. A. Tiller
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
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Abstract

Self-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 393
Copyright
Copyright © Materials Research Society 1987

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References

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