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Silicon Field Emitter Array by Fast Anodization Method

Published online by Cambridge University Press:  14 March 2011

Y.M. Fung ,
W.Y. Cheung ,
I.H. Wilson ,
J.B. Xu  and
S.P. Wong
Y.M. Fung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, P. R. China
W.Y. Cheung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, P. R. China
I.H. Wilson
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, P. R. China
J.B. Xu
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, P. R. China
S.P. Wong
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, P. R. China
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Abstract

A new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R5.4.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Turner, D.R., J. Electrochem. Soc. 105 (1958) 402–408.Google Scholar
[2] Smith, R.L., Collins, S.D., J.Appl. Phys. 71(8) (1992) R1–R22.Google Scholar
[3] Imai, K., Solid-State Electronics, 24 (1981) 159–164.Google Scholar
[4] Frye, R.C., Proc. Material Res. Soc. Symp., Vol. 33 (1984) 53–62.Google Scholar
[5] Anderson, R.C., Muller, R.S. and Tobias, C.W., J. of Electroelectromechanical Systems, 3(1) (1994) 10–18.Google Scholar
[6] Higa, K., Nishii, K. and Asano, T., J. Vac. Sci. Technol. B16(2) (1998) 651–652.Google Scholar
[7] Jessing, J.R., Kim, H.R., Parker, D.L. and Weichold, M.H., J. Vac. Sci. Technol. B16(2) (1998) 777–779.Google Scholar
[8] Hamilton, B., Semicond. Sci. Technol. 10 (1995) 1187.Google Scholar
[9] Hubbard, T.J., Antonsson, E.K., J. of Electroelectromechanical Systems, 3(1) (1994) 19–28 Google Scholar
[10] Ziel, A. van der, Solid State Physical Electronics (Prentice-Hall, Engle-wood Cliffs, NJ, (1968) 164.Google Scholar
[11] Chen, D., Wong, S.P., Cheung, W.Y., Wu, W., Luo, E.Z., Xu, J.B., Wilson, I.H. and Kwok, R.W.M., Appl. Phys. Lett. 72(15) (1998) 1926–1928.Google Scholar