Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T02:34:46.505Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Etching Mechanisms - Doping Effect

Published online by Cambridge University Press:  21 February 2011

Young H. Lee ,
Mao-Min Chen  and
A. A. Bright
Young H. Lee
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Mao-Min Chen
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
A. A. Bright
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

Etch rates of heavily doped silicon films (n- and p-type) and undoped polysilicon film were studied during plasma etching and also during reactive ion etching in a CF4/O2 plasma. The etch rate of undoped Si was lower than the n+ Si etch rate, but higher than the p+ Si etch rate, when the RF inductive heating by the eddy current was minimized by using thermal backing to the water-cooled electrode. The thermal activation energy for spontaneous chemical etching was measured to be 0.10 eV, independent of the doping characteristics. This doping effect may be explained by the opposite polarity of the space charge present in the depletion layer of n+ Si and p+ Si during reactive plasma etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 163
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jinno, K., Kinoshida, H. and Matsumoto, Y., J. Electrochem. Soc., 125, 827 (1978).CrossRefGoogle Scholar
2. Mogab, C. J. and Levinstein, H. J., J. Vac. Sci. Technol., 17, 721 (1980).CrossRefGoogle Scholar
3. Ephrath, L. M. and Bennett, R. S., “VLSI Science and Technology/1982,” edited by Dell'oca, C. and Bullis, W. (Electrochem. Soc. Inc., Pennington, 1982), p. 108.Google Scholar
4. Leahy, M. F. and Tanguay, D. J., in “Plasma Processing,” edited by Mathad, G. S., Schwartz, G. C. and Smolinsky, G. (Electrochemical Soc. Inc., Pennington, 1983), p. 235.Google Scholar
5. Flamm, D. L. and Donnelly, V. M., Plasma Chem. Plasma Process, 1, 31 7 (1981).Google Scholar
6. Lee, Y. H. and Chen, M.-M., J. Appl. Phys., 54, 5966 (1983).Google Scholar
7. Winters, H. F., Coburn, J. W. and Chuang, T. J., J. Vac. Sci. Technol., B1, 469(1983).Google Scholar
8. Chen, M.-M. and Lee, Y. H., J. Electrochem. Soc., 131, 2118 (1984). 169Google Scholar
9. Lee, Y. H., Chen, M.-M., Ahn, K. Y. and Bright, A. A., Thin Solid Films, 118, 149 (1984).CrossRefGoogle Scholar
10. Schwartz, G. C. and Schaible, P. M., in “Plasma Processing,” edited by Frieser, R. G. and Mogab, C. J. (Electrochem. Soc., Pennington, 1981), p. 133.Google Scholar
11. Mader, H., in “Plasma Processing,” edited by Frieser, R. and Mogab, C. J. (Electrochem. Soc., Pennigton, 1981), p. 125.Google Scholar
12. Watkins, G. D. and Corbett, J. W., Phys. Rev., 121, 1001 (1961).CrossRefGoogle Scholar
13. Lee, Y. H. and Corbett, J. W., Phys. Rev., B13, 2653 (1976).Google Scholar
14. Watkins, G. D., in “Defects in Semiconductors,” edited by Narajan, I. and Tan, T. (North-Holland, New York 1981), p. 21.Google Scholar