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Silicon Etching Mechanisms - Doping Effect

Published online by Cambridge University Press:  21 February 2011

Young H. Lee ,
Mao-Min Chen  and
A. A. Bright
Young H. Lee
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Mao-Min Chen
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
A. A. Bright
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Etch rates of heavily doped silicon films (n- and p-type) and undoped polysilicon film were studied during plasma etching and also during reactive ion etching in a CF4/O2 plasma. The etch rate of undoped Si was lower than the n+ Si etch rate, but higher than the p+ Si etch rate, when the RF inductive heating by the eddy current was minimized by using thermal backing to the water-cooled electrode. The thermal activation energy for spontaneous chemical etching was measured to be 0.10 eV, independent of the doping characteristics. This doping effect may be explained by the opposite polarity of the space charge present in the depletion layer of n+ Si and p+ Si during reactive plasma etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 163
Copyright
Copyright © Materials Research Society 1985

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