Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-19T08:49:48.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Detectors Highly Compensated by Neutron Induced Deep Levels for Low Energy X-RAY Detection*

Published online by Cambridge University Press:  21 February 2011

Zheng Li  and
H. W. Kraner
Zheng Li
Affiliation:
Brookhaven National Laboratory, Upton, New York 11973
H. W. Kraner
Affiliation:
Brookhaven National Laboratory, Upton, New York 11973
Get access

Abstract

Fast neutron radiation damage in silicon results in defect levels which are predominantly acceptor-like at low fluences and may be used to compensate high resistivity ntype material to create very high effective resisitivity material. Compensated material to the order of Neff below 1011/cm3 enables depletion of diode thicknesses ≥ 1mm at reasonable biases (<100V), yielding diodes of reasonable area and capacitance<1 pF which are suitable for low noise applications such as X-ray spectrometry. Although exposure to fluences of this order will greatly increase the generation current and require cooling, most high resolution X-ray spectrometry systems are routinely operated at reduced temperature to achieve low noise operation of the front end electronics. Silicon p+ /n− /n+ implanted devices (area ≤0.25 cm2) made on high resistivity FZ silicon have been irradiated by 1 MeV neutrons to fluences of a few times 1012 n/cm2. Thick n− substrates (d=630 μm and 1000 μm) were used to achieve detector capacitances εεo/d in the range of 1 pF. After a neutron fluence of ϕn=2.9×1012 n/cm2, the total depletion of a p+/n−/n+ detector, 1040 μm thick and an area of 0.1 cm2, is reached at about V=50 Volts, with a Cd of 1 pF and a neutron induced leakage current of about 300 nA at room temperature. A total depletion of an 680 μm thick detector was reached after the fluence of 2-5×1012 n/cm2 at a voltage of 20 volts, and the capacitance of a 0.25 cm2 diode is 4.5 pF The resistivities of the compensated detector substrates are in the range of 100 K Ω-cm, and are not inverted to “p” type. The trapping of collected charge by neutron induced deep levels is modeled and simulated, and is found to be less than a few percent; with no obvious effect on peak shape. Using a resistive feedback preamplifier of modest noise contribution (225 eV), resolution of the Mn K∝ X-ray was 255 eV (FWHM) with 3 μsec shaping time constants. Other effects of uncollected charge will be discussed and comparisons between this type of detectors and Li-drift silicon detectors will be made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 527
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This research was supported by the U.S. Department of Energy: Contract No. DE-AC02-76CH00016

References

REFERENCES

1. Jaklevic, J. M. and Goulding, F. S., IEEE Trans. Nucl. Sci., Vol. NS–16, 187 (1971).CrossRefGoogle Scholar
2. Friant, A., Presented at the French Soc. of Electron and Radioelectron. Engr., Malakoff, France, 19 May 1971, CEA-CONF-1963; CONF-710525-2.Google Scholar
3. Musket, R. F. and Bauer, W., Nucl. Instr. Meths., Vol. 109, 593 (1973).Google Scholar
4. Rossington, C. S., Walton, J. T., and Jaklevic, J. M., IEEE Trans. Nucl. Sci., Vol. 38, No. 2, 239 (1991).Google Scholar
5. Rossington, C. S., Giaugue, R. D., and Jaklevic, J. M., IEEE Trans. Nucl. Sci., T-NS Aug. (570) 1992.Google Scholar
6. Howes, J. H., Proceedings of the 2nd International Conf. on Ion Implantation in Semiconductor, Phys, and Technology, Fundamental and Appl. Aspects, 414 (1971).Google Scholar
7. Gessner, T., Isotopenpraxis, Vol. 16, No. 7, 218 (1980).Google Scholar
8. Honglin, Ding and Guirong, Li, Dianzixue, He Tance, Yu, Jishu Chinow, 160 (1987).Google Scholar
9. Avdeichikov, V. V., Ganza, E. A., and Prikhodtseva, V. P., Izvestiya Akdemii Nauk SSSR, Seriya Fizicheskaya, Vol. 40, No. 6 1266 (1976).Google Scholar
10. Yabe, M., Sato, N., Kamijo, H., Takechi, T., Shirashi, F., “Nucl. Instr. and Meths.”, Vol. 193, 63 (1982).Google Scholar
11. Chen, W., Li, Zheng, and Kraner, H.W., BNL-46100, IEEE Nucl. Sci. Symposium, Santa Fe, Nov. 1991, IEEE Trans. Nucl. Sci., Pt. I, 558 (1992).Google Scholar
12. Died, H., Gooch, T., Kelsey, D., Klanner, R., Lotfler, A., Pepe, M. and Wickens, R., Nucl. Instr. and Meths., A 253, 460 (1987).Google Scholar
13. Tsveybak, I., Bugg, W., Harver, J. A., and Walter, J., IEEE Nucl. Sci. Symposium, Santa Fe, Nov. 1991, IEEE Trans. Nucl. Sci., Pt. I, 1720 (1992).Google Scholar
14. Watkins, G. D., “The Lattice Vacancy in Silicon”, Deep Centers in Semiconductors, ed. Panfelides, S., NY, 1986.Google Scholar
15. Lindström, G., Benkert, M., Fretwurst, E., Schulz, T. and Winston, R., Proc. of the First International Conf. on Calorimetry in High Energy Physics, Anderson, D. F. et al. , Des, (World Scientific Publishing Co., Singapore, 467 (1990).Google Scholar
16. Kraner, H. W., Li, Zheng, and Fretwurst, E., BNL-47506, Nucl. Instr. and Meths., A326, 350 (1993).Google Scholar
17. Li, Zheng, Eremin, V., Strokan, N., and Verbitskaya, E., presented at the IEEE Nucl. Sci. Symp., Orlando, Fl., Oct. 25-31, 1992. To be published in the IEEE Trans. Nucl. Sci. (in press).Google Scholar
18. Li, Zheng, to be presented at the International Symposium on Development and Application of Semiconductor Tracking Detectors, May 22-24, 1993, Hiroshima, Japan.Google Scholar
19. Kraner, H. W., Li, Zheng, and Pésnecke, K. V., Nucl. Instr. and Meth., A 279, 266 (1989).Google Scholar
20. Li, Zheng, Chen, W., and Kraner, H. W., Nucl. Instr. and Meths., A308, 585 (1991).Google Scholar
21. Li, Zheng and Kraner, H.W., presented at the Third International Conference on Advanced Technology and Particle Physics, Como, Italy, June 22-26, 1992, to be published in Nuclear PhysicsGoogle Scholar
22. Maisch, T., Giinzler, R., Weiser, M., Kalbitzer, S., Welser, W., and Kemmer, J., Nucl. Instr. and Meths., A 288, 19 (1990)Google Scholar