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Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

Published online by Cambridge University Press:  01 February 2011

Michel Pons ,
Shin-Ichi Nishizawa ,
Peter Wellmann ,
Elisabeth Blanquet ,
Didier Chaussende  and
Jean Marc Dedulle
Michel Pons
Affiliation:
[email protected], INPGrenoble, CNRS-LTPCM, 1130 rue de la Piscine, BP 75, Saint Martin D'Heres, Rhone-Alpes, 38402, France
Shin-Ichi Nishizawa
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Japan, Ibaraki 305-8568, Japan
Peter Wellmann
Affiliation:
[email protected], Erlangen University, Materials Department 6, Martensstr. 7, Erlangen, Germany, 91058, Germany
Elisabeth Blanquet
Affiliation:
[email protected], INPGrenoble, CNRS, 1130 rue de la Piscine, BP 75, Saint Martin D'Heres, Rhone-Alpes, 38402, France
Didier Chaussende
Affiliation:
[email protected], INPGrenoble, CNRS, 1130 rue de la Piscine, BP 75, Saint Martin D'Heres, Rhone-Alpes, 38402, France
Jean Marc Dedulle
Affiliation:
[email protected], INPGrenoble, CNRS, 1130 rue de la Piscine, BP 75, Saint Martin D'Heres, Rhone-Alpes, 38402, France
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Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD) and hybrid techniques, are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions. Preliminary results show that fine tuning of H2 or precursor additions allow a better control of concentrations of residual and intentional doping.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B04-02
Copyright
Copyright © Materials Research Society 2006

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