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Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

Published online by Cambridge University Press:  10 February 2011

S. Rendakova ,
N. Kuznetsov ,
N. Savkina ,
M. Rastegaeva ,
A. Andreev ,
M. Minbaeva ,
A. Morozov  and
V. Dmitriev
S. Rendakova
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia Crystal Growth Research Center, St. Petersburg, 194021, Russia
N. Kuznetsov
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
N. Savkina
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
M. Rastegaeva
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
A. Andreev
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
M. Minbaeva
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
A. Morozov
Affiliation:
Crystal Growth Research Center, St. Petersburg, 194021, Russia
V. Dmitriev
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia MSRCE, Howard University, Washington, DC, 20059 USA TDI, Inc., Gaithersburg, MD, 20877 USA [email protected]
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Abstract

The characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 131
Copyright
Copyright © Materials Research Society 1998

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References

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