Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T15:46:34.978Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Carbide And Gallium Nitride Rf Power Devices

Published online by Cambridge University Press:  10 February 2011

C. E. Weitzel  and
K. E. Moore
C. E. Weitzel
Affiliation:
Phoenix Corporate Research Laboratories, Motorola, Inc. MS-EL508, 2100 E. Elliot Rd., Tempe, AZ 85284
K. E. Moore
Affiliation:
Phoenix Corporate Research Laboratories, Motorola, Inc. MS-EL508, 2100 E. Elliot Rd., Tempe, AZ 85284
Get access

Abstract

Impressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 111
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Trew, R.J., Yan, J. and Mock, M.P., Proc. IEEE 79, 598 (1991).Google Scholar
2. Weitzel, C.E., Palmour, J.W., Carter, C.H. Jr., Moore, K., Nordquist, K.J., Allen, S., Thero, C. and Bhatnagar, M., Trans. IEEE Electron Devices 43, 1732 (1996).Google Scholar
3. Mohammad, S.N., Salvador, A.A. and Morkoc, H., Proc. IEEE 83, 1306 (1995).Google Scholar
4. Schaffer, W.J., Negley, G.H., Irvine, K.G. and Palmour, J.W., Diamond, SiC, and Nitride Wide Bandgap Semiconductors 339 (Material Research Society), 595 (1994).Google Scholar
5. Weitzel, C.E., Palmour, J.W., Carter, C.H. Jr., and Nordquist, K., IEEE Electron Device Letters 15, 406 (1994).10.1109/55.320983Google Scholar
6. Wu, Y. -F., Keller, B.P., Keller, S., Kapolnek, D., Denbaars, S.P. and Mishra, U.K., 54th. Device Research Conference Digest, 60 (1996).Google Scholar
7. Shur, S.M. and Khan, M.A., MRS Bulletin XXII, 44 (1997).Google Scholar
8. Nishizawa, J., Terasaki, T. and Shibata, J., IEEE Trans. Electron Devices ED–22, 185 (1975).Google Scholar
9. Ohkawa, S., Suyama, K. and Ishikawa, H., FUJITSU Scientific & Technical Journal, 151 (1975).Google Scholar
10. Agarwal, A.K., Augustine, G., Balakrishna, V., Brandt, C.D., Burk, A.A., Chen, L.S., Clarke, R.C., Esker, P.M., Hobgood, H.M., Hopkins, P.H., Morse, A.W., Rowland, L.B., Seshadri, S., Siergiej, R.R., Smith, T.J. Jr. and Sriram, S., IEDM Technical Digest, 225 (1996).Google Scholar
11. Clarke, R.C., Agarwal, A.K., Siergiej, R.R., Brandt, C.D. and Morse, A.W., 54th Device Research Conference Digest, 62 (1996).Google Scholar
12. Siergiej, R.R., Morse, A.W., Esker, P.M., Smith, T.J. Jr., Bojko, R.J., Rowland, L.B. and Clarke, R.C., 55th Device Research Conference Digest, 136 (1997).Google Scholar
13. Moore, K., Weitzel, C., Nordquist, K., Pond, L. III, Palmour, J., Allen, S., Tsvetkov, V.K., Macko, S. and Carter, C. Jr., 15th Biennial IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 12 (1995).Google Scholar
14. Sriram, S., Augustine, G., Burk, A.A., Glass, R.C., Hobgood, H.M., Orphanos, P.A., Rowland, L.B., Smith, T.J., Brandt, C.D., Driver, M.C. and Hopkins, R.H., IEEE Electron Device Letters 17, 369 (1996).Google Scholar
15. Allen, S.T., Sadler, R.A., Alcorn, T.S., Palmour, J.W. and Carter, C.H. Jr., IEEE MYTT-S Digest, 57 (1997).Google Scholar
16. Khan, M.A., Chen, Q., Shur, M.S., Dermott, B.T., Higgins, J.A., Burm, J., Schaff, W.J. and Eastman, L.F., IEEE Electron Device Letters 17, 584 (1996).Google Scholar
17. Wu, Y. -F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., Kehias, L.T., Denbaars, S.P. and Mishra, U.K., 55th Device Research Conference Digest, 142 (1997).Google Scholar
18. Weitzel, C.E., Silicon Carbide and Related Materials 1995 (Inst. Phys. Pub., Bristol) 142, 765 (1996).Google Scholar
19. Moore, K.E., Weitzel, C.E., Nordquist, K.J., Pond, L.L. III, Palmour, J.W., Allen, S. and Carter, C.H. Jr., IEEE Electron Device Letters 18, 69 (1997).10.1109/55.553047Google Scholar
20. Sriram, S., Smith, T.J., Rowland, L.B., Burk, A.A. Jr., Augustine, G., Balakrishna, V., Hobgood, H.M. and Brandt, C.D., 55th Device Research Conference Digest, 138 (1997).Google Scholar
21. Cardullo, M. and Davidson, B., Wireless Systems Design June, 28 (1997) and private communications.Google Scholar
22. Morse, A.W., Esker, P.M., Clarke, R.C., Brandt, C.D., Siergiej, R.R. and Agarwal, A.W., IEEE MTT-S Digest, 677 (1996).Google Scholar