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Silicide Formation in Ti-Si and Co-Si REACTIONS

Published online by Cambridge University Press:  21 February 2011

L.L. Clevengert ,
Q.Q. Hong ,
R. Mann ,
J.M.E. Harpert ,
K. Barmake ,
C. Cabral Jr. ,
C. Nobili  and
G. Ottaviani
L.L. Clevengert
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
Q.Q. Hong
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
R. Mann
Affiliation:
IBM Technology Products, Essex Junction, VT 05452
J.M.E. Harpert
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
K. Barmake
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015
C. Cabral Jr.
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
C. Nobili
Affiliation:
Universita Degli Studi Di Modena, Modena, Italy
G. Ottaviani
Affiliation:
Universita Degli Studi Di Modena, Modena, Italy
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Abstract

Titanium silicide and cobalt silicide crystallization and formation reactions are important for the processing of CMOS circuits. We demonstrate that kinetic analysis of these reactions under both high heating rates and isothermal heating conditions allows for the determination of transformation mechanisms. For Ti/Si reactions, we show that the C49 to C54-TiSi2 transformation can not be bypassed using heating rates up to 3000°C/min. For the crystallization of CoSi2 from amorphous Co-Si thin films without ion irradiation, the crystallization kinetics are characterized by three dimensional growth from quickly consumed nucleation sites. With high dose silicon ion implantation of the as-deposited films, the crystallization mechanism changes to homogeneous nucleation and two dimensional growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 253
Copyright
Copyright © Materials Research Society 1993

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References

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