Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T03:40:23.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicide engineering: influence of alloying elements on CoSi2 nucleation

Published online by Cambridge University Press:  14 March 2011

C. Detavernier ,
R.L. Van Meirhaeghe ,
K. Maex  and
F. Cardon
C. Detavernier
Affiliation:
Vakgroep Vaste Stofwetenschappen, Ghent University, Krijgslaan 281/S1, 9000 GentBelgium
R.L. Van Meirhaeghe
Affiliation:
Vakgroep Vaste Stofwetenschappen, Ghent University, Krijgslaan 281/S1, 9000 GentBelgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium also at E.E. Dept, K.U. Leuven, B-3001 Leuven, Belgium
F. Cardon
Affiliation:
Vakgroep Vaste Stofwetenschappen, Ghent University, Krijgslaan 281/S1, 9000 GentBelgium
Get access

Abstract

Evidence is presented that the nucleation of CoSi2 can be influenced by the presence of small amounts of other elements. The presence of trace amounts of Ti in the CoSi (originating from either a Ti capping layer or interlayer) causes an increase in the CoSi2 nucleation temperature. Moreover, the presence of Ti in the CoSi induces a preferential orientation of the CoSi2 : for an increasing amount of Ti, we observed a transition from polycrystalline CoSi2 over preferential (220) orientation towards epitaxial (400) CoSi2. We observed similar effects for other elements (e.g. Ta, W, C, Mo, Cr). We were able to explain these findings based on the heterogeneous nucleation of CoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C8.4.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lawrence, M., Dass, A., Fraser, D.B., and Wei, C.S., Appl. Phys. Lett. 58, 1308 (1991).Google Scholar
2. d'Heurle, F.M., J. Mater. Res. 3, 167–195 (1988).Google Scholar
3. Appelbaum, A., Knoell, R.V., Murarka, S.P., J. Appl. Phys. 57, 1880 (1985).Google Scholar
4. Zhang, S.-L., d'Heurle, F.M., summerschool on silicides, Erice (1999).Google Scholar
5. Bulle-Lieuwma, C., Ommen, A. van, Hornstra, J., Aussems, C., J. Appl. Phys. 71, 2211 (1992).Google Scholar
6. Vantomme, A., Degroote, S., Dekoster, J., Langouche, G., Pretorius, R., Appl. Phys. Lett. 74, 3137 (1999).Google Scholar
7. Kleinschmit, M.W., Yeadon, M., Gibson, J.M., Appl. Phys. Lett. 75, 3288 (1999).Google Scholar
8. Detavernier, C., Meirhaeghe, R.L. Van, Cardon, F., Maex, K., MRS 2000 (also in this volume).Google Scholar
9. Komeda, T., Hirano, T., Waddill, G.D., Anderson, S.G., Sullivan, J.P., Weaver, J.H., Phys. Rev. B 41, 8345 (1990).Google Scholar