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Silane Adsorption and Decomposition on Si(111)-(7×17)

Published online by Cambridge University Press:  25 February 2011

S. M. Gates ,
C. M. Greenlief  and
D. B. Beach
S. M. Gates
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
C. M. Greenlief
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
D. B. Beach
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
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Abstract

The reactive sticking coefficient, SR, of SiH4 on the Si(111)-(7×7) surface has been studied as a function of hydrogen coverage (ΘH) in the surface temperature (TS) range 80–500°C. At 400°C, evidence is seen for two adsorption regimes which are proposed to correspond to minority and majority surface sites. On the minority sites (ΘH = 0 to 0.08), SR is approximately independent of TS. On the majority sites (ΘH > 0.08), SR is a complicated function of TS and ΘH. After SiH4 exposure, surface SiH is the dominant stable decomposition intermediate from 80 to 500°C, with detectable populations of SiH2 and SiH3 present at the lowest temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 179
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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