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Significance of Microstructure for a MOCVD-Grown YSZ Thin Film Gas Sensor

Published online by Cambridge University Press:  15 February 2011

J. Vetrone ,
C. Foster  and
G. Bai
J. Vetrone
Affiliation:
Material Science Division, Argonne National Lab 9700 S. Cass Ave, Argonne, IL 60439
C. Foster
Affiliation:
Material Science Division, Argonne National Lab 9700 S. Cass Ave, Argonne, IL 60439
G. Bai
Affiliation:
Material Science Division, Argonne National Lab 9700 S. Cass Ave, Argonne, IL 60439
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Abstract

We report the fabrication and characterization of a low temperature (200°C-400°C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 565
Copyright
Copyright © Materials Research Society 1996

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References

1. for a review see, Tillement, O., Solid State Ionics 68, 9 (1994).Google Scholar
2. Madou, M. J. and Morrison, S. R., Chemical Sensing with Solid State Devices, Academic Press, Boston, 1989, p. 437–474.Google Scholar
3. Hill, D. C. and Tuller, H. L. in Ceramic Materials for Eectronics. ed. by Buchanan, R. C. (Marcel Kekker Inc., New York, NY 1986), p. 265–374.Google Scholar
4. Green, J. E., Wickersham, C. E., Zilko, Z. L., Welsh, L. B., and Szofran, F. R., J. Vac. Sci. Technol. 13, 72 (1976).Google Scholar
5. Croset, M., Schnell, P., and Velasco, G., J. Vac. Sci. Technol. 14, 777 (1977).Google Scholar
6. Vayenas, C. G., loannides, A., and Bebelis, S., J. Catalysis 129, 67 (1991).Google Scholar
7. Yi, J., Kaloyannis, A., and Vayenas, C. G., Electrochemica Acta, 38, 2533 (1993).Google Scholar