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SiGe Thermoelectric Film for Gas Sensor Micro-Devices

Published online by Cambridge University Press:  01 February 2011

Woosuck Shin ,
Kazuki Tajima ,
Yeongsoo Choi ,
Noriya Izu ,
Ichiro Matsubara  and
Norimitsu Murayama
Woosuck Shin
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
Kazuki Tajima
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
Yeongsoo Choi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
Noriya Izu
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
Ichiro Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
Norimitsu Murayama
Affiliation:
National Institute of Advanced Industrial Science and Technology, Nagoya 463–8560, Japan
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Abstract

A gas sensor micro-device using both thermoelectric film and catalyst film has been developed on the platform of micro-hotplate. Thermoelectric thin film of B-doped SiGe was deposited on the Si3N4/SiO2/Si substrate by helicon sputtering method and thermal annealing was carried out to crystallize the as-deposited amorphous-like film. With increasing the annealing temperature and time, the crystallization of the SiGe thin film progressed, resulting in high carrier mobility and large absolute value of Seebeck coefficient. The hydrogen sensitivity of the micro-thermoelectric gas sensors was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A7.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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