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Sidewall Quality and Step Coverage of Thin Fluorosilicate Glass Films

Published online by Cambridge University Press:  15 February 2011

Mark T. Weise  and
Steven C. Selbrede
Mark T. Weise
Affiliation:
Mattson Technology Inc., 3550 W. Warren Ave., Fremont, CA 94538
Steven C. Selbrede
Affiliation:
Mattson Technology Inc., 3550 W. Warren Ave., Fremont, CA 94538
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Abstract

The quality of TEOS fluorosilicate glass (FSG) films deposited on deep silicon trenches was investigated by etching the films with 100:1 HF. The etch rate of the top and sidewall surfaces was measured by SEM as a function of FSG fluorine content. The FSG wet etch rate was correlated to the refractive index, stress and fluorine content. The sidewalls were found to etch slower than the top surfaces, suggesting a lower fluorine content on the sidewalls. Additionally, the step coverage of TEOS oxide improved significantly as fluorine content was increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 279
Copyright
Copyright © Materials Research Society 1997

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References

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