Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T15:31:30.722Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC Semiconductor Applications - An Air Force Perspective

Published online by Cambridge University Press:  15 February 2011

L. S. Rea
L. S. Rea*
Affiliation:
U.S. Air Force Wright Laboratory Materials Directorate 3005 P St. Ste. 6,WPAFB ohio, 45433-7707, WPAFB, Ohio 45433-7707, [email protected], [email protected]
Get access

Abstract

The Department of Defense (DoD) is investing in the development of Silicon Carbide (SiC) for a wide range of applications. Over the past year, SiC technology has demonstrated excellent device performance results for power devices, high temperature electronic devices and microwave devices. The materials growth and processing technology for SiC is now at a level of sufficient maturity to support substantial device development efforts. While there is still considerable materials and device research required for SiC to achieve it's full potential, the fundamental technology has been proven for several critical applications. A perspective on some Air Force device performance requirements will be presented. The status of SiC materials development, material limits to advances in device performance and issues relating to supporting technology will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 3
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Reinhardt, K. C., Scofield, J. D. and Mitchel, W. C., in Proceedings from the Workshop on High Temperature Electronics for Vehicles, edited by G., Khalil, H., Singh and T., Podlesak (Army Research Laboratory Technical Report, April, 1995) pp. 73–79.Google Scholar
2. Reinhardt, K. C., private communication.Google Scholar
3. Przybylko, S. J. in the Proceedings from the 29th Joint Propulsion Conference and Exhibit (AIAA/SAE/ASME/ASEE, June, 1993), pp. 1–9.Google Scholar
4. Krishnamurthy, V., Brown, D. M., Downey, E., Kretchmer, J. and Larkin, D., “Characterization of 6H SiC Epitaxial Layers Grown Using Site-Competition Epitaxy”, to be published in Transactions. 3rd High Temperature ElectronicsConference, (June, 1996) Albuquerque, NM.Google Scholar
5. King, J., private communication.Google Scholar