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β-SiC MESFETs*

Published online by Cambridge University Press:  25 February 2011

G. Kelner ,
S. Binari ,
K. Sleger  and
H. Kong
G. Kelner
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
S. Binari
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
K. Sleger
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
H. Kong
Affiliation:
North Carolina State University, Raleigh, N.C. 27695-7907
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Abstract

A β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxial n on p SiC layer grown by chemical vapor deposition on a p-type Si(100) substrate. Modulation of the n-type channel current is achieved with a Au Schottky barrier gate. A transconductance of 2.3 mS/mm was obtained using a 5 micron gate length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 227
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

This work was sponsored by the Office of Naval Research

References

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