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Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding?
Published online by Cambridge University Press: 25 February 2011
Abstract
Through application of a lattice model of the Si(001) surface, implemented in a Monte Carlo growth simulation we investigate the structural evolution of the Si(001) surface during molecular beam epitaxy. Particular emphasis is placed upon identifying the role of both enhanced diffusion and directional bonding.
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- Copyright © Materials Research Society 1990