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Si(001) Homoepitaxial Growth

Published online by Cambridge University Press:  15 February 2011

R. M. Tromp ,
W. Theis  and
N. C. Bartelt
R. M. Tromp
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598, USA
W. Theis
Affiliation:
IBM Research Division, T.J. Watson Research Center P.O. Box 218 Yorktown Heights, NY 10598, USA
N. C. Bartelt
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
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Abstract

Epitaxial growth is generally treated as a far-from-equilibrium process, dominated by kinetic restraints rather than thermodynamic driving forces. In this paper we show that homoepitaxial growth, at temperatures exceeding ∼500°C, is a process that can be approached very well from a thermodynamic equilibrium viewpoint, augmented with classical homogeneous nucleation theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 404: Symposium J – In Situ Electron and Tunneling Microscopy of Dynamic Processes , 1995 , 107
Copyright
Copyright © Materials Research Society 1996

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References

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