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Si(001) Homoepitaxial Growth
Published online by Cambridge University Press: 15 February 2011
Abstract
Epitaxial growth is generally treated as a far-from-equilibrium process, dominated by kinetic restraints rather than thermodynamic driving forces. In this paper we show that homoepitaxial growth, at temperatures exceeding ∼500°C, is a process that can be approached very well from a thermodynamic equilibrium viewpoint, augmented with classical homogeneous nucleation theory.
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- Copyright © Materials Research Society 1996
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