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Si Ultra Shallow Junctions Dopant Profiling with ADF-STEM

Published online by Cambridge University Press:  01 February 2011

Andrea Parisini ,
D. Giubertoni ,
M. Bersani ,
V. Morandi ,
P. G. Merli  and
J. A. van den Berg
Andrea Parisini
Affiliation:
[email protected], CNR-IMM, Sezione di Bologna, via P. Gobetti 101, Bologna, I-40129, Italy, +39 051 6399154, +39 051 6399216
D. Giubertoni
Affiliation:
[email protected], Fondazione Bruno Kessler-irst, via Sommarive 14, Povo (Tn), I-38050, Italy
M. Bersani
Affiliation:
[email protected], Fondazione Bruno Kessler-irst, via Sommarive 14, Povo (Tn), I-38050, Italy
V. Morandi
Affiliation:
[email protected], CNR-IMM, Sezione di Bologna, via P. Gobetti 101, Bologna, I-40129, Italy
P. G. Merli
Affiliation:
[email protected], CNR-IMM, Sezione di Bologna, via P. Gobetti 101, Bologna, I-40129, Italy
J. A. van den Berg
Affiliation:
[email protected], Institute of Materials Research, University of Salford, Joule Physics Laboratory, Salford, M5 4WT, United Kingdom
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Abstract

In this work, we show how the Z-contrast annular dark field scanning transmission electron microscopy technique can provide reliable dopant profiles in ultra shallow junctions in Si. Dopant profiles obtained with this technique are compared with those obtained by spectroscopic techniques like secondary ion mass spectroscopy and medium energy ion scattering.

Keywords

scanning transmission electron microscopy (STEM)ion-implantationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C09-04
Copyright
Copyright © Materials Research Society 2008

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References

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