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Si Ion Implantation in InAlAs/InGaAs Heterostructures

Published online by Cambridge University Press:  21 February 2011

B. Descouts ,
N. Duhamel ,
E. V. K. Rao ,
Y. Gao  and
J. P. Praseuth
B. Descouts
Affiliation:
Centre National d'Etudes des Télécommunications Laboratoire de Bagneux 196 avenue Henri Ravera -92220 BAGNEUX - FRANCE
N. Duhamel
Affiliation:
Centre National d'Etudes des Télécommunications route de Trégastel -22301 LANNION Cedex
E. V. K. Rao
Affiliation:
Centre National d'Etudes des Télécommunications Laboratoire de Bagneux 196 avenue Henri Ravera -92220 BAGNEUX - FRANCE
Y. Gao
Affiliation:
Centre National d'Etudes des Télécommunications Laboratoire de Bagneux 196 avenue Henri Ravera -92220 BAGNEUX - FRANCE
J. P. Praseuth
Affiliation:
Centre National d'Etudes des Télécommunications Laboratoire de Bagneux 196 avenue Henri Ravera -92220 BAGNEUX - FRANCE
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Abstract

Si29 implants have been performed in InGaAs and InAlAs single layers as well as in InGaAs/InAlAs heterostructures. Nearly 100% activation has been obtained in InGaAs after conventional furnace annealing or rapid thermal annealing. On the other hand, a low activation efficiency (30%) has been observed in InAlAs. A preliminary photoluminescence measurements study shows that an appreciable fraction of Si exists in the form of complex centers. Hall effect and specific contact resistivity maps carried out in the heterostructures indicate a very good homogeneity of the electrical parameters over a 4 cm2 sample and give a satisfactory value of the specific contact resistivity (10−7 ω.cm2)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 345
Copyright
Copyright © Materials Research Society 1989

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