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Shubnikov-De Haas Studies of Negative Persistent Photoconductivity in AlGaSb/InAs/AlGaSb Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Ikai Lo ,
W. C. Mitchel ,
M. O. Manasreh ,
C. E. Stutz  and
K. R. Evans
Ikai Lo
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533
W. C. Mitchel
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533
M. O. Manasreh
Affiliation:
WL/ELRA, Wrigh Laboratory, Wright-Patterson Air Force Base, OH 45433–6543
C. E. Stutz
Affiliation:
WL/ELRA, Wrigh Laboratory, Wright-Patterson Air Force Base, OH 45433–6543
K. R. Evans
Affiliation:
WL/ELRA, Wrigh Laboratory, Wright-Patterson Air Force Base, OH 45433–6543
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Abstract

We have measured the Shubnikov-de Haas (SdH) effect in the MBE grown Al0.6Ga0.4Sb/InAs/Al0.6Ga0.4Sh single quantum well (QW) for the magnetic fields up to 4.5T and the temperatures from 1.1 K to 4.2K. The carrier concentration of the two dimensional electron gas (2DEG) was varied via the negative persistent photoconductivity (NPPC) effect. By illuminating the sample with a red light-emitting diode (LED) at the low temperature, the carrier concentration of the 2DEG in the InAs well was reduced from 5.8×1011 cm−2 to 3.6×1011 cm−2 and the corresponding quantum lifetime increased from 0.16ps to 0.21ps. The effective mass was determined by the temperature dependence of SdH oscillations and equal to (0.0317 ± 0.0005)m0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 759
Copyright
Copyright © Materials Research Society 1992

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References

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