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Short-Period Strain-balanced GaAs1-x Nx/InAs(N) Superlattices Lattice-matched to InP(001): a new material for 0.4–0.6 eV mid IR applications

Published online by Cambridge University Press:  26 February 2011

L. Bhusal ,
A. Alemu  and
A. Freundlich
L. Bhusal
Affiliation:
Photovoltaics and Nanostructures group, Texas Center for Superconductivity and Advanced Materials, University of Houston, 4800 Calhoun, TX-77204, USA Physics Department, University of Houston, 4800 Calhoun, TX-77204, USA
A. Alemu
Affiliation:
Photovoltaics and Nanostructures group, Texas Center for Superconductivity and Advanced Materials, University of Houston, 4800 Calhoun, TX-77204, USA
A. Freundlich
Affiliation:
Photovoltaics and Nanostructures group, Texas Center for Superconductivity and Advanced Materials, University of Houston, 4800 Calhoun, TX-77204, USA Physics Department, University of Houston, 4800 Calhoun, TX-77204, USA
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Abstract

A theoretical and experimental investigation of electronic band structure (Γ-point) of strain balanced GaAs1-xNx/InAs1-xNx short period superlattice on InP is performed. A six-band Kane Hamiltonian and band anti-crossing models, modified for the strain effects are used to describe the electronic states of the highly strained zincblende GaAs1-xNx and InAs1-xNx ternaries. Operating wavelengths of these heterostructures are predicted to extend beyond 2 μm. Preliminary photoluminescence results of the chemical beam epitaxially grown sample are shown to be consistent with the theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.18
Copyright
Copyright © Materials Research Society 2005

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References

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