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Short gate length AlGaN/GaN HEMTs

Published online by Cambridge University Press:  15 March 2011

O. Breitschädel ,
L. Kley ,
H. Gräbeldinger ,
B. Kuhn ,
F. Scholz  and
H. Schweizer
O. Breitschädel
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097, [email protected]
L. Kley
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097
H. Gräbeldinger
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097
B. Kuhn
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097
F. Scholz
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097
H. Schweizer
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097
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Abstract

We report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.29.1
Copyright
Copyright © Materials Research Society 2000

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References

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