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Shape Control and Emission-wavelength Extension of InP-based InAsSb Nanostructures

Published online by Cambridge University Press:  31 January 2011

Wen Lei ,
H. H. Tan  and
C. Jagadish
Wen Lei
Affiliation:
[email protected], Dept of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia
H. H. Tan
Affiliation:
[email protected], Dept of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia
C. Jagadish
Affiliation:
[email protected], Dept of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia
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Abstract

This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2um, which is very useful for their application as mid-infrared emitters.

Keywords

nanostructureself-assemblyoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1208: Symposium O – Excitons and Plasmon Resonances in Nanostructures II , 2009 , 1208-O04-02
Copyright
Copyright © Materials Research Society 2010

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