Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:28:31.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

Published online by Cambridge University Press:  16 February 2011

C. A. Pico ,
X. Y. Qian ,
E. Jones ,
M. A. Lieberman  and
N. W. Cheung
C. A. Pico
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
X. Y. Qian
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
E. Jones
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
M. A. Lieberman
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
N. W. Cheung
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA 94720
Get access

Abstract

Plasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 115
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Kim, J-G., Cho, B-J., and Kim, C-K., J. Electrochem. Soc. 137, 2857, 1990.Google Scholar
2) Simonton, R.B., Nucl. Instr. and Meth. B21, 490, 1987.Google Scholar
3) Conrad, J.R., Radtke, J.L., Dodd, R.A., Worzala, F.J., and Tran, N.C., J. Appl. Phys. 62, 4591, 1987.Google Scholar
4) Qian, X.Y., Carl, D., Benasso, J., Cheung, N.W., Lieberman, M.A., Brown, I.G., Galvin, J.E., MacGill, R.A., and Current, M.I., “A Plasma Immersion Ion Implantation Reactor for ULSI Applications”, presented at VIII Int'l. Conf. on Ion Implantation Tech., July 31-Aug. 3, 1991, (accepted for publication in Nucl. Instr. and Meth.).Google Scholar
5) Qian, X.Y., Cheung, N.W., Lieberman, M.A., Felch, S.B., Brennan, R., and Current, M.I., “P+-N Junction Formation with Plasma Immersion Ion Implantation”, presented at vIII Int'l. Conf. on Ion Implantation Tech., July 31-Aug. 3, 1991, (accepted for publication in Nucl. Instr. and Meth.).Google Scholar
6) Muller, R.S. and Kamins, T.I., Device Eletronice for Integrated Circuits, 2nd ed. (John Wiley and Sons, New York, 1986).Google Scholar