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Shallow Ion Implantation in Gallium Arsenide Mesfet Technology

Published online by Cambridge University Press:  26 February 2011

J. P. de Souza  and
D. K. Sadana
J. P. de Souza
Affiliation:
Instituto de Física, UFRGS, 91500 Porto Alegre, R. S., Brazil
D. K. Sadana
Affiliation:
Thomas J. Watson Research Center, IBM, Yorktown Heights, N. Y., 10598, USA
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Abstract

This review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 887
Copyright
Copyright © Materials Research Society 1992

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