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Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

Published online by Cambridge University Press:  10 February 2011

R. Wang ,
P. P. Ruden ,
J. Kolnik ,
I. Oguzman  and
K. F. Brennan
R. Wang
Affiliation:
Dept. of EE, Univ. of Minnesota, Minneapolis, MN 55455, [email protected]
P. P. Ruden
Affiliation:
Dept. of EE, Univ. of Minnesota, Minneapolis, MN 55455, [email protected]
J. Kolnik
Affiliation:
School of ECE, Georgia Tech., Atlanta, GA 30332
I. Oguzman
Affiliation:
School of ECE, Georgia Tech., Atlanta, GA 30332
K. F. Brennan
Affiliation:
School of ECE, Georgia Tech., Atlanta, GA 30332
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Abstract

Calculations of shallow donor states for wurtzite and zincblende structure GaN, and acceptor states for zincblende GaN in an effective mass approximation are presented. Band parameters were taken from experiment or determined from band structure calculations. The effect of wavevector dependent screening is examined, based on dielectric functions calculated from empirical pseudopotential band structures. For donor states, the effects of electron-phonon coupling and free carrier screening in the Thomas-Fermi and Debye approximations are discussed briefly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 935
Copyright
Copyright © Materials Research Society 1997

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References

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