Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:53:42.932Z Has data issue: false hasContentIssue false
  • English
  • Français

Sequential Lateral Solidification of PECVD and Sputter Deposited a-Si Films

Published online by Cambridge University Press:  14 March 2011

M. A. Crowder ,
Robert S. Sposili ,
A. B. Limanov  and
James S. Im
M. A. Crowder
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
Robert S. Sposili
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
A. B. Limanov
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
James S. Im
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
Get access

Abstract

We have investigated sequential lateral solidification (SLS) of amorphous Si films that have been prepared via PECVD and sputter deposition methods. The focus of the work was on identifying and analyzing the energy density and per-pulse translation distance parameter space that permits SLS of these films. Experimental details include the use of a two-axisprojection irradiation system to image a straight-slit beamlet pattern onto the sample, and analyzing the resulting microstructures by SEM and optical microscopy of Secco-etched samples. High-temperature-deposited LPCVD films were also examined to enable further comparative analysis. We conclude from these results that there are no major differences in both the SLS process characteristics and the resulting microstructure among the investigated films (provided that the films are dehydrogenated in the case of PECVD a-Si). Based on the controlled super-lateral growth (C-SLG) model of the SLS process, we attribute these findings to the fact that the SLS method involves—as one of its essential features—complete melting of the Si film at fluences that are sufficient to thoroughly melt crystalline Si films, during which all pre-irradiation phase and microstructural details are erased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.7.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Im, J. S., Crowder, M. A., Sposili, R. S., Leonard, J. P., Kim, H. J., Yoon, J. H., Gupta, V. V., Song, H. J., and Cho, H. S., Physica Status Solidi 166, 603 (1998).Google Scholar
[2] Sposili, R. S. and Im, J. S., Appl. Phys. Lett. 69, 2864 (1996).Google Scholar
[3] Im, J. S., Sposili, R. S., and Crowder, M. A., Appl. Phys. Lett. 70, 3434 (1997).Google Scholar
[4] Limanov, A. B., Borisov, V. M., Vinokhodov, A. Y., Demin, A. I., El'tsov, A. I., Kirukhin, Y. B., and Khristoforov, O. B., in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, edited by Hemment, P. L. F. (Kluwer Academic Publishers, New York, 2000), pp. 55–61.Google Scholar
[5] Kohler, J. R., Dassow, R., Bergmann, R., Krinke, J., Strunk, H. P., and Werner, J. H., Thin Solid Films 337, 129 (1999).Google Scholar
[6] Kamins, T., Polycrystalline silicon for integrated circuit applications (Kluwer Academic Publishers, New York, 1988).Google Scholar
[7] Sposili, R. S., Crowder, M. A., and Im, J. S., New excimer laser crystallization system for conducting the sequential lateral solidification (SLS) process, to be published in these proceedings.Google Scholar
[8] Pribat, D., Legagneux, P., Plais, F., Reita, C., Petinot, F., and Huet, O., in Flat Panel Display Materials II, edited by Hatalis, M. K., Kanicki, J., Summers, C. J., and Funada, F. (Mater. Res. Soc. Proc., Pittsburg, Penn., 1997), Vol. 424, pp. 127–140.Google Scholar
[9] Brotherton, S. D., McCulloch, D. J., Gowers, J. P., Ayres, J. R., and Trainor, M. J., J. Appl. Phys. 82, 4086 (1997).Google Scholar
[10] Kim, H. J., Im, J. S., and Thompson, M. O., in Microcrystalline semiconductors: materials science and devices, edited by Fauchet, P. M., Tsai, C. C., Canham, L. T., Shimizu, I., and Aoyagi, Y. (Mater. Res. Soc. Proc., Pittsburg, Penn., 1994), Vol. 283, p. 703.Google Scholar
[11] Im, J. S. and Kim, H. J., Appl. Phys. Lett. 64, 2303 (1994).Google Scholar
[12] Im, J. S., Kim, H. J., and Thompson, M. O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
[13] Yoon, J. H. and Im, J. S., Metals and Materials 5, 525 (1999).Google Scholar