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Sensing Shape Recovery using Conductivity Noise in Thin Films of NiTi Shape Memory Alloys

Published online by Cambridge University Press:  01 February 2011

U. Chandni ,
M.V. Manjula ,
Arindam Ghosh ,
H.S. Vijaya  and
S. Mohan
U. Chandni
Affiliation:
[email protected], Indian Institute of Science, Physics, Bangalore, India
M.V. Manjula
Affiliation:
[email protected], Indian Institute of Science, Physics, Bangalore, India
Arindam Ghosh
Affiliation:
[email protected], Indian Institute of Science, Physics, Bangalore, India
H.S. Vijaya
Affiliation:
[email protected], Indian Institute of Science, Instrumentation, Bangalore, India
S. Mohan
Affiliation:
[email protected], Indian Institute of Science, Instrumentation, Bangalore, India
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Abstract

Low frequency fluctuations in the electrical resistivity, or noise, have been used as a sensitive tool to probe into the temperature driven martensite transition in dc magnetron sputtered thin films of nickel titanium shape-memory alloys. Even in the equilibrium or static case, the noise magnitude was more than nine orders of magnitude larger than conventional metallic thin films and had a characteristic dependence on temperature. We observe that the noise while the temperature is being ramped is far larger as compared to the equilibrium noise indicating the sensitivity of electrical resistivity to the nucleation and propagation of domains during the shape recovery. Further, the higher order statistics suggests the existence of long range correlations during the transition. This new characterization is based on the kinetics of disorder in the system and separate from existing techniques and can be integrated to many device applications of shape memory alloys for in-situ shape recovery sensing.

Keywords

electrical propertiesphase transformationthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1129: Symposium V – Materials and Devices for Smart Systems III , 2008 , 1129-V13-01
Copyright
Copyright © Materials Research Society 2009

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References

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