Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T16:34:44.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Sensing Properties of Ba1划xLaxNbyTi1划yO3 (x=0.25%, y=0.25%) Thin-Film on SiO2/Si Substrate

Published online by Cambridge University Press:  21 March 2011

B. Li ,
P. T. Lai ,
G. Q. Li ,
S. H. Zeng  and
M. Q. Huang
B. Li
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
P. T. Lai
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
G. Q. Li
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
S. H. Zeng
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
M. Q. Huang
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
Get access

Abstract

Barium lanthanum titanate-niobate (Ba1划xLaxNbyTi1划yO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 28∼400 °C, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC11.12.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Li, G. Q., Lai, P. T., Zeng, S. H., Huang, M. Q. and Li, B., A new thin-film humidity and thermal micro-sensor with Al/SrNbxTi1划xO3/SiO2/Si structure, Sensors and Actuators A, 75, 70 (1999).10.1016/S0924-4247(99)00052-7Google Scholar
[2] Li, B., Lai, P. T., Li, G. Q., Zeng, S. H. and Huang, M. Q., A new multi-function thin-film microsensor based on Ba1划xLaxTiO3 , Smart Materials and Structure, 9, 498 (2000).10.1088/0964-1726/9/4/313Google Scholar
[3] Seiyama, T., Yamazoe, N. and Arai, H., Ceramic humidity sensors, Sensors and Actuators, 4 85 (1983).10.1016/0250-6874(83)85012-4Google Scholar
[4] Bube, R. H., Photoelectronic Properties of Semiconductors, Cambridge University Press, (1992) pp. 189.Google Scholar
[5] Nag, B. R., Electron Transport in Compound Semiconductors, Springer, Berlin, 1980.10.1007/978-3-642-81416-7Google Scholar
[6] Li, G. Q., Lai, P. T., Zeng, S. H., Huang, M. Q. and Cheng, Y. C., Photo-, thermal and humidity sensitivity characteristics of Sr1划xLaxTiO3 film on SiO2/Si structure, Sensors and Actuators A, 63, 223 (1997).10.1016/S0924-4247(97)80509-2Google Scholar